NEMS-CMOS Hybrid Technology and its Applications

Si-based CMOS technology is facing a serious challenge in terms of power consumption variability. The increasing costs associated with physical scaling have motivated a search for alternative approaches. Hybridization of nano-electromechanical (NEM)-switch and Sibased CMOS devices has shown a theoretical feasibility for power management. However, a huge technical gap must be bridged before a true nanoscale NEM switch can be realized due to insufficient material development and limited understanding of reliability mechanisms. The authors here propose using a multilayer graphene as a nanoscale cantilever material to fabricate a true nanoscale NEM switch, whose dimension will be comparable to the state of the art Si-based CMOS devices. An optimal thickness for the multilayer graphene (~ 5 layers) is suggested based on an analytical model. The multilayer graphene can provide the highest Young’s modulus among the known electrode materials and the yielding strength allowing 2 more than 15% of bending. Further research on material screening and device integration is needed to realize the promises of hybridization of NEM-switch and Si-based CMOS devices.